Kunezinhlobo eziningi zemibhobho embonini yokuvikela imvelo. Imibhobho yokucindezela uthuli ene-atomized kanye nemibhobho ye-desulfurization esiyenzayo isetshenziswa kakhulu embonini yokuvikela imvelo. Imibhobho yokucindezela uthuli isebenzisa amaphampu wamanzi aphezulu ukucindezela i-atomization noma umoya ocindezelweyo ukushayela i-atomization, engakhiqiza izikhathi eziphindwe ka-1-5 kunothuli. (Ngemuva kwezilingo eziphindaphindwayo, lobungako benkungu bunamandla amakhulu okuvimbela uthuli), bese buyahluka emoyeni, lapho buhlangana nothuli, buhlangana nothuli, futhi ekugcineni lubuyisele uthuli phansi.

Sisebenzisa imibhobho evunguza noma imibhobho ye-vortex emibhobho ye-desulfurization, engadala umgoqo ophelele wokuvimbela i-sulfide ukuthi ingadedelwa emgodini. Amabhulashi we-Desulfurization enziwe kakhulu nge-silicon carbide. Lokhu kungenxa yokuthi lapho impahla ye-silicon carbide ishiswa ibe ngu-1300 ° C emoyeni, ungqimba oluvikelayo lwe-silicon dioxide luqala ukwakheka ebusweni bamakristalu alo e-silicon carbide. Ngokuqina kongqimba oluvikelayo, i-silicon carbide yangaphakathi ivinjelwe ekubeni ne-oxidized, okwenza i-silicon carbide ibe nokumelana okungcono kwe-oxidation. Lapho izinga lokushisa lifinyelela ku-1900K (1627 ° C) noma ngaphezulu, ifilimu yokuvikela i-silicon dioxide iqala ukubhujiswa futhi i-oxidation ye-silicon carbide iyaqina. Ngakho-ke, i-1900K ukushisa okuphezulu kokusebenza kwe-silicon carbide endaweni ene-oxidant.

Ukumelana ne-acid ne-alkali kwemibhobho ye-desulfurization: Ngokumelana nama-acid, i-alkalis nama-oxide, ngenxa yendima yefilimu yokuvikela i-silicon dioxide, i-silicon carbide ine-acid enamandla ne-alkali resistance.